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1. product profile 1.1 general description 50 w ldmos power transistor for base station applications at frequencies from 2500 mhz to 2700 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz 1.2 features and benefits ? typical 2-carrier w-cdma performance at frequencies of 2500 mhz and 2700 mhz, a supply voltage of 28 v and an i dq of 430 ma: ? average output power = 3 w ? power gain = 16.5 db (typical) ? efficiency = 14.5 % ? acpr = ? 47 dbc ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (2500 mhz to 2700 mhz) ? internally matched for ease of use ? integrated current sense ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec 1.3 applications ? rf power amplifiers fo r base stations and multi carrier applications in the 2500 mhz to 2700 mhz frequency range BLF6G27L-50BN; blf6g27ls-50bn power ldmos transistor rev. 2 ? 7 april 2011 product data sheet table 1. typical performance rf performance at t case = 25 c in a common source class-ab production test circuit. mode of operation f i dq v ds p l(av) g p d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2500 to 2700 430 28 3 16.5 14.5 ? 47 [1]
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 2 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLF6G27L-50BN (sot1112a) 1drain 2gate 3source [1] 4, 5 sense drain 6, 7 sense gate blf6g27ls-50bn (sot1112b) 1drain 2gate 3source [1] 4, 5 sense drain 6, 7 sense gate 3 5 4 1 7 6 2 sym12 6 1 3 2 6, 7 4, 5 5 1 3 4 7 2 6 sym12 6 1 3 2 6, 7 4, 5 table 3. ordering information type number package name description version BLF6G27L-50BN - flanged ceramic package; 2 mounting holes; 6 leads sot1112a blf6g27ls-50bn - earless flanged ceramic package; 6 leads sot1112b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v v gs(sense) sense gate-source voltage ? 0.5 +9 v i d drain current - 12 a t stg storage temperature ? 65 +150 c t j junction temperature - 200 c
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 3 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 12.5 w (cw) 1.3 k/w table 6. characteristics t j = 25 c per section; unless otherwise specified symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.5ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =72ma 1.4 1.9 2.4 v i dq quiescent drain current sense transistor: i ds = 9.1 ma; v ds =26.5v main transistor: v ds =28v 380 430 480 ma i dss drain leakage current v gs =0v; v ds =28v--1.5 a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 10 12 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 150 na g fs forward transconductance v ds =10v; i d =3.6a - 5.0 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =2.52a -0.25- table 7. 2-carrier w-cdma application information all testing performed in class-ab production test ci rcuit; test signal 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz; f 1 = 2500 mhz; f 2 = 2600 mhz; f 3 = 2700 mhz; rf performance at v ds = 28 v; i dq = 430 ma; t case =25 c; unless otherwise specified. symbol parameter conditions min typ max unit p l(av) average output power - 3 - w g p power gain p l(av) = 3 w 15.3 16.5 - db d drain efficiency p l(av) = 3 w 12.5 14.5 - % acpr adjacent channel power ratio p l(av) = 3 w - ? 47 ? 43 dbc i dq quiescent drain current v dd = 28 v - 430 - ma
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 4 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 7.1 ruggedness in class-ab operation the BLF6G27L-50BN and blf6g27ls-50bn are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =430ma; p l = 40 w (cw); f = 2500 mhz. 7.2 single carrier is-95 single carrier is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on the ccdf. channel bandwidth is 1.2288 mhz. table 8. 1-carrier w-cdma application information all testing performed in class-ab production test ci rcuit; test signal 3gpp; test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf per carrier; f = 2700 mhz; rf performance at v ds =28v; i dq = 430 ma; t case =25 c; unless otherwise specified. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) = 16 w 4.1 4.7 5.3 db v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 1. single carrier is-95 power gain as a function of load power; typical values fig 2. single carrier is-95 drain efficiency as a function of load power; typical values p l (w) 025 20 10 15 5 001aan474 15.5 16.0 15.0 16.5 17.0 g p (db) 14.5 (1) (2) (3) p l (w) 025 20 10 15 5 001aan478 20 30 10 40 50 d (%) 0 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 5 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 7.3 pulsed cw v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 3. single carrier is-95 acpr at 885 khz as a function of load power; typical values fig 4. single carrier is-95 acpr at 1980 khz as a function of load power; typical values p l (w) 025 20 10 15 5 001aan481 ? 50 ? 40 ? 60 ? 30 ? 20 acpr 885 (dbc) ? 70 (1) (2) (3) p l (w) 025 20 10 15 5 001aan484 ? 60 ? 45 ? 75 ? 30 ? 15 acpr 1980 (dbc) ? 90 (1) (2) (3) v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 5. single carrier is-95 peak-to-average power ratio as a function of load power; typical values fig 6. single carrier is-95 peak power as a function of load power; typical values p l (w) 025 20 10 15 5 001aan485 4 6 2 8 10 pa r 0 (1) (2) (3) p l (w) 025 20 10 15 5 001aan486 20 40 60 p l(m) (w) 0 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 6 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 7. pulsed cw power gain as a function of load power; typical values fig 8. pulsed cw drain efficiency as a function of load power; typical values p l (w) 050 40 20 30 10 001aan487 14 15 13 16 17 g p (db) 12 (1) (2) (3) p l (w) 050 40 20 30 10 001aan488 20 30 10 40 50 d (%) 0 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 7 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 7.4 2-carrier w-cdma all testing performed in class-ab production test circuit; test signal 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; carrier spacing 5 mhz; f 1 = 2500 mhz; f 2 = 2600 mhz; f 3 = 2700 mhz; t case = 25 c; unless otherwise specified. v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 9. 2-carrier w-cdma power gain as a function of load power; typical values fig 10. 2-carrier w-cdma drain efficiency as a function of load power; typical values p l (w) 025 20 10 15 5 001aan489 15.5 16.0 15.0 16.5 17.0 g p (db) 14.5 (1) (2) (3) p l (w) 025 20 10 15 5 001aan490 20 30 10 40 50 d (%) 0 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 8 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 11. 2-carrier w-cdma acpr at 5 mhz as a function of load power; typical values fig 12. 2-carrier w-cdma acpr at 10 mhz as a function of load power; typical values p l (w) 025 20 10 15 5 001aan491 ? 30 ? 20 ? 40 ? 10 0 acpr 5m (dbc) ? 50 (1) (2) (3) p l (w) 025 20 10 15 5 001aan492 ? 40 ? 30 ? 50 ? 20 ? 10 acpr 10m (dbc) ? 60 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 9 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 7.5 single carrier w-cdma all testing performed in class-ab production test circuit; test signal 3gpp; test model 1; 64 dpch; par = 7.2 db at 0.01 % probabilit y on ccdf per carrier; f = 2700 mhz; t case =25 c; unless other wise specified. v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds = 28 v; i dq = 430 ma. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 13. single carrier w-cdma peak-to-average power ratio as a function of load power; typical values fig 14. single carrier w-cdma peak output power as a function of load power; typical values p l (w) 025 20 10 15 5 001aan493 4.5 6.0 3.0 7.5 9.0 pa r 1.5 (1) (2) (3) p l (w) 025 20 10 15 5 001aan494 40 60 20 80 100 p l(m) (w) 0 (1) (2) (3)
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 10 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 8. package outline fig 15. package outline sot1112a references outline version european projection issue date iec jedec jeita sot1112a sot1112a_po 09-10-12 10-02-02 unit (1) mm max nom min 4.65 3.76 1.14 0.89 0.18 0.10 9.65 9.40 9.65 9.40 9.65 9.40 1.14 0.89 17.12 16.10 3.30 2.92 9.91 9.65 0.25 a dimensions f langed ceramic package; 2 mounting holes; 6 leads sot1112 a bb 1 5.26 5.00 cdd 1 e 5.97 5.72 64 62 z e 1 9.65 9.40 fhl 3.00 2.69 pq (2) 1.70 1.45 q 15.24 u 1 20.45 20.19 u 2 w 1 0.51 inches max nom min 0.183 0.148 0.045 0.035 0.007 0.004 0.38 0.37 0.38 0.37 0.38 0.37 0.045 0.035 0.674 0.634 0.130 0.115 0.39 0.38 0.01 0.207 0.197 0.235 0.225 64 62 0.38 0.37 0.118 0.106 0.067 0.057 0.6 0.805 0.795 0.02 w 2 0 5 10 mm scale a d f d 1 l e q e 1 c b c a q u 1 p z h b b 1 u 2 a b w 1 c w 2 5 4 1 7 6 2 3 note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body.
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 11 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor fig 16. package outline sot1112b references outline version european projection issue date iec jedec jeita sot1112b sot1112b_po 09-10-12 10-02-02 unit (1) mm max nom min 4.65 3.76 1.14 0.89 0.18 0.10 9.65 9.40 9.65 9.40 9.65 9.40 1.14 0.89 17.12 16.10 9.91 9.65 0.51 a dimensions e arless flanged ceramic package; 6 leads sot1112 b bb 1 5.26 5.00 cdd 1 e 11.20 10.95 64 62 z 1 e 1 9.65 9.40 fhl 3.00 2.69 q (2) 1.70 1.45 u 1 9.91 9.65 u 2 w 2 5.97 5.72 inches max nom min 0.183 0.148 0.045 0.035 0.007 0.004 0.38 0.37 0.38 0.37 0.38 0.37 0.045 0.035 0.674 0.634 0.39 0.38 0.02 0.207 0.197 0.441 0.431 64 62 0.38 0.37 0.118 0.106 0.067 0.057 0.39 0.38 0.235 0.225 z 0 5 10 mm scale a d f d 1 l d e q e 1 c u 2 3 u 1 z 1 z h b b 1 d w 2 5 4 1 7 6 2 note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body.
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 12 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 9. handling information 10. abbreviations caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 9. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor par peak-to-average power ratio rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 13 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 11. revision history table 10. revision history document id release date data sheet status change notice supersedes BLF6G27L-50BN_6g27ls-50bn v.2 20110407 product data sheet - BLF6G27L-50BN_ 6g27ls-50bn v.1 modifications: ? section 1.1 on page 1 : 45 w has been changed to 50 w. ? table 1 on page 1 : several changes have been made. ? the esd warning has been moved to section 9 on page 12 . ? section 1.2 on page 1 : the value of efficiency has been changed. ? section 1.3 on page 1 : the term w-cdma has been removed from the sentence. ? table 4 on page 2 : the limiting values for i d have been added. ? table 5 on page 3 : the value for r th(j-case) has been changed. ? table 6 on page 3 : several changes have been made. ? table 7 on page 3 : several changes have been made. ? table 8 on page 4 : several changes have been made. ? section 7.1 on page 4 : several changes have been made. ? section 7.2 on page 4 : section has been added. ? section 7.3 on page 5 : section has been added. ? section 7.4 on page 7 : section has been added. ? section 7.5 on page 9 : section has been added. ? section 9 on page 12 : section has been added. BLF6G27L-50BN_6g27ls-50bn v.1 20100916 objective data sheet - -
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 14 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLF6G27L-50BN_6g27ls-50bn all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 7 april 2011 15 of 16 nxp semiconductors blf6g27l(s)-50bn power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf6g27l(s)-50bn power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 7 april 2011 document identifier: BLF6G27L-50BN_6g27ls-50bn please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 4 7.2 single carrier is-95 . . . . . . . . . . . . . . . . . . . . . . 4 7.3 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 7.5 single carrier w-cdma . . . . . . . . . . . . . . . . . . 9 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 12 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 contact information. . . . . . . . . . . . . . . . . . . . . 15 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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